SiliconSmart DFM

SiliconSmart® DFM Extensions to the SiliconSmart characterization system enable designers to tackle both systematic and random process variations. By reducing reliance on guard-banding techniques such as OCV and by guiding the selection of higher-yielding cells, SiliconSmart DFM Extensions allow designers to increase yield. Random parameter variations are modeled as statistical timing and power tables for statistical analysis. For systematic variations, SiliconSmart DFM Extensions model the timing and power sensitivity to the variations and thus enable analytic computation of timing and power when used in conjunction with lithography simulation.

Enables systematic and random process variation characterization.
Allows accurate modeling of systematic variation timing through integration with lithography characterization.
Provides massive runtime savings through intelligent simulation optimization for statistical parameter selection and data gathering.
Allows reduction in OCV margins by modeling systematic and random variations.
Enables increased yield of highfrequency parts by allowing optimization to fix failures caught by statistical timing analysis.